| Electronic Components Datasheet Search |
|
FZT605 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
FZT605 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 3 page ![]() Silicon NPN Power Transistor FZT605 www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNI T V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA, IB= 0A 120 -- -- V ICEO Collector Cutoff Current VCE= 120V -- -- 100 nA ICBO Collector-Base Cut-Off Current VCB= 120V -- -- 100 nA IEBO Emitter Cutoff Current VEB= 8V -- -- 100 nA hFE1 DC Current Gain IC= 500mA, VCE= 5V 5000 -- -- hFE2 DC Current Gain IC= 1A, VCE= 5V 2000 -- 100000 VCE(sat) Collector-Emitter Saturation Voltage IC= 250mA, IB= 0.25mA -- -- 1.0 V IC=1A, IB= 1mA -- -- 1.5 V VBE(sat) Base-Emitter Turn-On Voltage IC=1A, IB= 1mA -- -- 1.8 V VBE(on) Base-Emitter Turn-On Voltage IC=1A,VCE= 5V -- -- 1.7 V PACKAGE OUTLINE |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |