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PM8804 Datasheet(PDF) 17 Page - STMicroelectronics

Part # PM8804
Description  PWM peak current mode controller for PoE and telecom systems
PDF  27 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

PM8804 Datasheet(HTML) 17 Page - STMicroelectronics

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DocID031629 Rev 1
17/27
PM8804
Applications information
27
If SS voltage reaches 2.8 V, a slow hiccup is performed sinking 2 µA from SS, and shutting
down the gate driver until the SS capacitor is fully discharged. Then a new soft-start
procedure is performed.
When a severe overcurrent occurs, like a short-circuit of an internal power component, and
350 mV level is reached on CS, the gate driver is instantaneously shut down and a fast
hiccup cycle is performed. When the 10 µA sink current fully discharges the SS capacitor, a
new soft-start procedure with a charging current of 10 µA is performed.
In case of persistent severe overcurrent, the control logic tries 4 cycles of fast hiccup before
definitively shutting down the PWM controller. To restart the device, after removing the
cause of overcurrent, VIN must be lowered to ground and then powered up again.
Figure 6. Short-circuit on the power transformer output
Ch1= SS, Ch2 = VG1, Ch3 =VCS, Ch4 = Vsense
5.7
Output drivers: GAT1 / GAT2 and MODE pin
The PM8804 is integrating two MOSFET drivers with up to 1 A peak sink current capability.
GAT1 is intended for driving the main switching MOSFET, while GAT2 is used for an
auxiliary function, depending on the topology selected: it can be used to drive a gate drive
transformer in synchronous flyback topologies or to control a P-channel MOSFET referred
to PGND in active clamp forward topologies.
The rising edge of GAT2 is anticipated by time period DT with respect to the rising edge of
GAT1, while the falling edge of GAT2 is delayed by the same time period DT with respect to
the falling edge of GAT1 (see Figure 7).
DT can be adjusted from 10 ns to 200 ns to fine tune the relative switching times of the
MOSFETs and to maximize the converter efficiency.



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