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IXKR40N60C Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXKR40N60C Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  ISF1365 eq IXKR40N60C N-Channel MOSFET Transistor www.iscsemi.com 1 FEATURES · Drain Current -ID= 38A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 70mΩ(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Power Factor Correction (PFC) Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous,TC= 25℃ 38 A ID Drain Current-Continuous,TC= 90℃ 25 A TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~125 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.25 ℃ /W file:///C:/Users/Administrator/Do cuments/WeChat Files/wxid_tz5gn4uyhzq221/FileSt orage/Temp/1718069263025.jpg |
Similar Part No. - IXKR40N60C |
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Similar Description - IXKR40N60C |
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