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STPS10150C Datasheet(PDF) 3 Page - STMicroelectronics

Part # STPS10150C
Description  High voltage power Schottky rectifier
PDF  12 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS10150C Datasheet(HTML) 3 Page - STMicroelectronics

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DocID7754 Rev 7
3/12
STPS10150C
Characteristics
12
To evaluate the conduction losses use the following equation:
P = 0.65 x IF(AV) + 0.02 x IF
2
(RMS)
Figure 1. Average forward power dissipation
versus average forward current (per diode)
Figure 2. Average forward current versus
ambient temperature (δ = 0.5, per diode)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
I(A)
F(av)
P(W)
F(av)
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
T
δ=tp/T
tp
Figure 3. Normalized avalanche power derating
versus pulse duration (Tj = 125 °C)
Figure 4. Reverse leakage current versus
reverse voltage applied (typical values,
per diode)
P(tp)
P
(10 µs)
ARM
ARM
0.001
0.01
0.1
1
1
10
100
1000
t (µs)
p
0
25
50
75
100
125
150
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
1E+5
V(V)
R
I (µA)
R
Tj=75°C
Tj=25°C
Tj=125°C
Tj=150°C
Tj=175°C
Figure 5. Relative variation of thermal
impedance junction to case versus pulse
duration (TO-220AB, D²PAK)
Figure 6. Relative variation of thermal
impedance junction to case versus pulse
duration (TO-220FPAB)
0.1
1.0
1.E-3
1.E-2
1.E-1
1.E+0
Single pulse
TO-220AB
D²PAK
Zth(j-c)/Rth(j-c)
tp(s)
0.0
0.1
1.0
1.E-3
1.E-2
1.E-1
1.E+0
1.E+1
Single pulse
TO-220FPAB
Zth(j-c)/Rth(j-c)
tp(s)



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