Characteristics

STPS10150C

2/12

DocID7754 Rev 7

1

Characteristics

When the diodes 1 and 2 are used simultaneously:

ΔTj(diode 1) = P(diode1) x R

th(j-c)(Per diode) + P(diode 2) x Rth(c)

Table 2. Absolute ratings (limiting values per diode at Tamb = 25 °C unless otherwise stated)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

150

V

IF(RMS)

Forward rms current

10

A

IF(AV)

Average forward current,

δ = 0.5,

square wave

TO-220AB, D²PAK

Tc = 155 °C

Per diode

5

A

TO-220FPAB

Tc = 145 °C

TO-220AB, D²PAK

Tc = 150 °C

Per device

10

TO-220FPAB

Tc = 130 °C

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

120

A

PARM

(1)

Repetitive peak avalanche power

tp = 10 µs, Tj = 125 °C

220

W

Tstg

Storage temperature range

-65 to + 175

°C

Tj

Maximum operating junction temperature(2)

175

°C

1.

For pulse time duration derating, please refer to Figure 3. More details regarding the avalanche energy measurements and

diode validation in the avalanche are provided in the application notes AN1768 and AN2025.

2.

condition to avoid thermal runaway for a diode on its own heatsink

dPtot

dTj

<

1

Rth(j-a)

Table 3. Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

TO-220AB, D²PAK

Per diode

4

°C/W

TO-220FPAB

7

TO-220AB, D²PAK

Total

2.4

TO-220FPAB

5.3

Rth(c)

Coupling

TO-220AB, D²PAK

0.7

TO-220FPAB

3.7

Table 4. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

IR

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

--

2.0

µA

Tj = 125 °C

-

0.40

2.0

mA

VF

(2)

Forward voltage drop

Tj = 25 °C

IF = 5A

-

-

0.92

V

Tj = 125 °C

-

0.69

0.75

Tj = 25 °C

IF = 10 A

--

1.0

Tj = 125 °C

-

0.79

0.85

1.

Pulse test: tp = 5 ms, δ < 2%

2.

Pulse test: tp = 380 µs, δ < 2%