| Electronic Components Datasheet Search |
|
MOC8050M Datasheet(PDF) 2 Page - ON Semiconductor |
|
|
|||||||||||||||||||||||||||||
MOC8050M Datasheet(HTML) 2 Page - ON Semiconductor |
|
2 / 13 page ![]() ©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC8021M, MOC8050M Rev. 3.2 April 2015 MOC8021M, MOC8050M 6-Pin DIP Photodarlington Optocoupler (No Base Connection) Features ■ High BVCEO: – Minimum 50 V (MOC8021M) – Minimum 80 V (MOC8050M) ■ High Current Transfer Ratio: – Minimum 1000% (MOC8021M) – Minimum 500% (MOC8050M) ■ No Base Connection for Improved Noise Immunity ■ Safety and Regulatory Approvals: – UL1577, 4,170 VACRMS for 1 Minute – DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage Applications ■ Appliances, Measuring Instruments ■ I/O Interface for Computers ■ Programmable Controllers ■ Portable Electronics ■ Interfacing and Coupling Systems of Different Potentials and Impedance ■ Solid State Relays Description The MOC8021M and MOC8050M are photodarlington- type optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor. Schematic Package Outlines EMITTER COLLECT N/C OR 1 2 3 ANODE CATHODE 4 5 6 N/C Figure 1. Schematic Figure 2. Package Outlines |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |