4

TMP461

SBOS722B – JUNE 2015 – REVISED AUGUST 2016

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(1)

Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may

degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond

those specified is not implied.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Power supply

V+

–0.3

6

V

Input voltage

THERM, ALERT/THERM2, SDA and SCL only

–0.3

6

V

D+, A0, A1

–0.3

(V+) + 0.3

D– only

–0.3

0.3

Input current

10

mA

Operating temperature

–55

150

°C

Junction temperature (TJ max)

150

°C

Storage temperature, Tstg

–60

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

V

Charged device model (CDM), JEDEC specification JESD22-C101(2)

±1000

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

V+

Supply voltage

1.7

3.3

3.6

V

TA

Operating free-air temperature

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

7.4 Thermal Information

THERMAL METRIC(1)

TMP461

UNIT

RUN (WQFN)

10 PINS

RθJA

Junction-to-ambient thermal resistance

123.1

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

60.1

°C/W

RθJB

Junction-to-board thermal resistance

78.1

°C/W

ψJT

Junction-to-top characterization parameter

4.6

°C/W

ψJB

Junction-to-board characterization parameter

78.1

°C/W