November 2013

©2006 Fairchild Semiconductor Corporation

FDB33N25 Rev. C1

www.fairchildsemi.com

1

FDB33N25

N-Channel UniFETTM MOSFET

250 V, 33 A, 94 m

Ω

Features

•RDS(on) = 94 mΩ (Max.) @ VGS = 10 V, ID = 16.5 A

• Low Gate Charge (Typ. 36.8 nC)

• Low Crss (Typ. 39 pF)

• 100% Avalanche Tested

Applications

•PDP TV

• Lighting

• Uninterruptible Power Supply

• AC-DC Power Supply

Description

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage

MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to

provide better switching performance and higher avalanche en-

ergy strength. This device family is suitable for switching power

converter applications such as power factor correction (PFC),

flat panel display (FPD) TV power, ATX and electronic lamp bal-

lasts.

G

S

D

D2-PAK

G

S

D

Absolute Maximum Ratings T

C = 25°C unless otherwise noted.

Thermal Characteristics

Symbol

Parameter

FDB33N25

Unit

VDSS

Drain-Source Voltage

250

V

ID

Drain Current

- Continuous (TC = 25°C)

- Continuous (TC = 100°C)

33

20.4

A

A

IDM

Drain Current

- Pulsed

(Note 1)

132

A

VGSS

Gate-Source voltage

±30

V

EAS

Single Pulsed Avalanche Energy

(Note 2)

918

mJ

IAR

Avalanche Current

(Note 1)

33

A

EAR

Repetitive Avalanche Energy

(Note 1)

23.5

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

PD

Power Dissipation

(TC = 25°C)

- Derate Above 25

°C

235

1.89

W

W/

°C

TJ, TSTG

Operating and Storage Temperature Range

-55 to +150

°C

TL

Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds

300

°C

Symbol

Parameter

FDB33N25

Unit

RθJC

Thermal Resistance, Junction-to-Case, Max.

0.53

°C/W

RθJA*

Thermal Resistance, Junction-to-Ambient (1 in2 Pad of 2-oz Copper), Max.

40

RθJA

Thermal Resistance, Junction-to-Ambient (Minimum Pad of 2-oz Copper), Max.

62.5