© 2010 Fairchild Semiconductor Corporation

www.fairchildsemi.com

BS170 / MMBF170 Rev. E2

2

Electrical Characteristics T

A=25°C unless otherwise noted

Note:

1. Pulse Test: Pulse Width

≤ 300μs, Duty Cycle ≤ 2.0%.

Ordering Information

Symbol

Parameter

Conditions

Type

Min.

Typ.

Max. Units

OFF CHARACTERISTICS

BVDSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 100μAAll

60

V

IDSS

Zero Gate Voltage Drain Current

VDS = 25V, VGS = 0V

All

0.5

μA

IGSSF

Gate - Body Leakage, Forward

VGS = 15V, VDS = 0V

All

10

nA

ON CHARACTERISTICS (Notes 1)

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 1mA

All

0.8

2.1

3

V

RDS(ON) Static Drain-Source On-Resistance VGS = 10V, ID = 200mA

All

1.2

5

Ω

gFS

Forward Transconductance

VDS = 10V, ID = 200mA

BS170

320

mS

VDS ≥ 2 VDS(on),

ID = 200mA

MMBF170

320

Dynamic Characteristics

Ciss

Input Capacitance

VDS = 10V, VGS = 0V,

f = 1.0MHz

All

24

40

pF

Coss

Output Capacitance

All

17

30

pF

Crss

Reverse Transfer Capacitance

All

7

10

pF

Switching Characteristics (Notes 1)

ton

Turn-On Time

VDD = 25V, ID = 200mA,

VGS = 10V, RGEN = 25Ω

BS170

10

ns

VDD = 25V, ID = 500mA,

VGS = 10V, RGEN = 50Ω

MMBF170

10

toff

Turn-Off Time

VDD = 25V, ID = 200mA,

VGS = 10V, RGEN = 25Ω

BS170

10

ns

VDD = 25V, ID = 500mA,

VGS = 10V, RGEN = 50Ω

MMBF170

10

Part Number

Package

Package Type

Lead Frame

Pin array

BS170

TO-92

BULK

STRAIGHT

D G S

BS170_D26Z

TO-92

Tape and Reel

FORMING

D G S

BS170_D27Z

TO-92

Tape and Reel

FORMING

D G S

BS170_D74Z

TO-92

AMMO

FORMING

D G S

BS170_D75Z

TO-92

AMMO

FORMING

D G S

MMBF170

SOT-23

Tape and Reel