MBR1635 - MBR1660 Rev. C

2001 Fairchild Semiconductor Corporation

MBR1635 - MBR1660

Schottky Rectifiers

Absolute Maximum Ratings*

T

A

= 25°C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics

T

A

= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

P

D

Power Dissipation

2.0

W

RθJA

Thermal Resistance, Junction to Ambient

60

°C/W

RθJL

Thermal Resistance, Junction to Lead

1.5

°C/W

Symbol

Parameter

Device

Units

1635

1645

1650

1660

V

F

Forward Voltage

I

F = 16 A, TC = 25°C

I

F = 16 A, TC = 125°C

0.63

0.57

0.75

0.65

V

V

IR

Reverse Current @ rated V

R

T

A = 25°C

T

A = 125°C

0.2

40

1.0

50

mA

mA

IRRM

Peak Repetitive Reverse Surge Current

2.0 us Pulse Width, f = 1.0 KHz

1.0

0.5

A

Features

• Low power loss, high efficiency.

• High surge capacity.

• For use in low voltage, high frequency

inverters, free wheeling, and polarity

protection applications.

• Metal silicon junction, majority carrier

conduction.

• High current capacity, low forward

voltage drop.

• Guard ring for over voltage protection.

TO-220AC

1

2

Thermal Characteristics

Symbol

Parameter

Value

Units

1635

1645

1650

1660

V

RRM

Maximum Repetitive Reverse Voltage

35

45

50

60

V

I

F(AV)

Average Rectified Forward Current

.375 " lead length @ T

A = 125°C

16

A

I

FSM

Non-repetitive Peak Forward Surge Current

8.3 ms Single Half-Sine-Wave

150

A

T

stg

Storage Temperature Range

-65 to +175

°C

T

J

Operating Junction Temperature

-65 to +150

°C

PIN 1 +

CASE

+

PIN 2 -

CASE Positive