BLV830 datasheet(1/6 Pages) ESTEK

Part #	BLV830

Description	N-channel Enhancement Mode Power MOSFET

PDF	6 Pages

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Manufacturer	ESTEK [Estek Electronics Co. Ltd]

Direct Link	http://www.estek.com.cn/en/index.asp

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• Avalanche Energy Specified

BVDSS

500V

• Fast Switching

RDS(ON)

1.5Ω

Ω

• Simple Drive Requirements

ID

4.5A

Description

This advanced high voltage MOSFET is produced

using Belling’s proprietary DMOS technology.

Designed for high efficiency switch mode power supply

.

Absolute Maximum Ratings ( T

C=25

oC unless otherwise noted )

Symbol

Parameter

Value

Units

VDS

Drain-Source Voltage

500

V

VGS

Gate-Source Voltage

+ 20

V

Continuous Drain Current

4.5

A

ID

Continuous Drain Current ( T

C=100

oC)

2.85

A

IDM

Drain Current (pulsed) (Note 1)

18

A

Power Dissipation

75

W

PD

Linear Derating Factor

0.59

W/℃

EAS

Single Pulsed Avalanche Energy (Note2)

250

mJ

IAR

Avalanche Current

4.5

A

EAR

Repetitive Avalanche Energy

7.5

mJ

Tj

Operating Junction Temperature Range

-55 to +150

oC

TSDG

Storage Temperature Range

-55 to +150

oC

Thermal Characteristics

Symbol

Parameter

Value

Units

Rth j-c

Thermal Resistance, Junction to case

Max.

1.67

℃/ W

Rth j-a

Thermal Resistance, Junction to Ambient

Max.

62.5

℃/ W

BLV830

N-channel Enhancement Mode Power MOSFET

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BLV830 Datasheet(PDF) 1 Page - Estek Electronics Co. Ltd

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