STTH3006DPI datasheet(4/5 Pages) STMICROELECTRONICS

4 / 5 page

STTH3006DPI

4/5

0.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50

2.75

3.00

100

125

T (°C)

I=I

Reference: T =125°C

F(AV)

V =400V

IRM

Fig. 8: Relative variation of dynamic parameters

versus junction temperature (reference: Tj = 125°C).

100

150

200

250

300

350

400

450

500

(V)

I=I

T =125°C

F(AV)

dI /dt(A/µs)

Fig. 9: Transient peak forward voltage versus

dIF/dt (typical values).

100

200

300

400

500

600

700

800

100

200

300

400

500

t (ns)

dI /dt(A/µs)

I=I

T =125°C

F(AV)

=1.1 x V max.

Fig. 10:

Forward recovery time versus dIF/dt

(typical values).

0.20

0.25

0.30

0.35

0.40

100

150

200

250

300

350

400

450

500

dI /dt(A/µs)

I=I

T =125°C

F(AV)

V =400V

Fig. 7: Reverse recovery softness factor versus

dIF/dt (typical values).

C(pF)

100

1000

100

1000

F=1MHz

=30mV

T =25°C

OSC

RMS

V (V)

Fig. 11: Junction capacitance versus reverse

voltage applied (typical values).

STTH3006DPI Datasheet(PDF) 4 Page - STMicroelectronics

STTH3006DPI Datasheet(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5

Datasheet Download

Link URL