STPSC10H065DI datasheet(5/17 Pages) STMICROELECTRONICS

Part #	STPSC10H065DI

Description	650 V, 10 A high surge silicon carbide power Schottky diode

PDF	17 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 17 page

Figure 5. Peak forward current versus case temperature

(TO-220AC Ins)

Figure 6. Junction capacitance versus reverse voltage

applied (typical values)

100

150

200

250

300

350

400

450

500

0.1

1 .0

10.0

100.0

1000.0

F=1 MHz

VOSC=30 mVRMS

Tj=25 °C

VR(V)

Cj(pF)

Figure 7. Relative variation of thermal impedance junction

to case versus pulse duration (TO-220AC, DPAK and

D²PAK)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

tp(s)

Zth(j-c) /Rth(j-c)

Figure 8. Relative variation of thermal impedance junction

to case versus pulse duration (TO-220AC Ins)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Single pulse

tp(s)

Zth(j-c) /Rth(j-c)

STPSC10H065

Characteristics (curves)

DS9226 - Rev 8

page 5/17

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