Table 6. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD(1)(2)

Forward on current

(continuous)

TC = 25 °C

-

45

A

VSD

Forward on voltage

ISD = 20 A, VGS = 0 V

-

1

V

trr(1)

Reverse recovery time

ID = 20 A, di/dt = 100 A/µs, VDD = 32 V

-

35

ns

Qrr(1)

Reverse recovery charge

-

24

nC

IRRM(1)

Reverse recovery current

-

1.5

A

1. Specified by design and evaluated by characterization, not tested in production.

2. This is the theoretical current value only related to the silicon.

STL100N4LF8

Electrical characteristics

DS14243 - Rev 5

page 4/13