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V1.0

23/02/24

Single Bipolar Transistor

Newark.com/multicomp-pro

Farnell.com/multicomp-pro

sg.element14.com/b/multicomp-pro

Absolute Maximum Ratings (Ta = 25°C Unless otherwise specified)

Parameter

Symbol

CSC

2690

CSC

2690A

Unit

Collector-base voltage (open emitter)

VCBO

120

160

V

Collector-emitter voltage (open base)

VCEO

Emitter Base Voltage (open collector)

VEBO

5

Collector current (DC)

IC

1.2

A

Collector Current (Pulse)1

2.5

Base current (DC)

IB

0.3

Total power dissipation up to TA = 25°C

Ptot

1.2

W

Total power dissipation up to TC = 25°C

20

Junction Temperature

Tj

150

°C

Storage temperature

Tstg

-65 to +150

Application

•  Audio frequency, High Frequency and Power Amplifier

Features:

1. Complementary PNP Transistors CSA1220, CSA1220A

2. This product is available in AEC-Q101 Compliant and PPAP Capable also.

Note: For AEC-Q101 compliant products, please use suffix -AQ in the part number while ordering.

Parameter

Symbol

Test Condition

Min./Min CSB649

CSD669 CSB649A

Unit

Collector Cut off Current

ICBO

IE = 0; VCB = 120V

Max

1

μA

Emitter Cut off Current

IEBO

IC = 0; VEB = 3V

1

Breakdown voltages

VCEO

IC = 1mA; IB = 0

120

160

V

VCBO

IC = 1mA; IE = 0

VEBO

IE = 1mA; IC = 0

5

Saturation voltage

VCEsat1

IC = 1A; IB = 0.2A

0.7

Base-emitter voltage

VBE (sat)1

1.3

DC Current Gain

hFE1

IC=5mA, VCE=5V

Min

35

IC=0.3mA, VCE=5V2

60 ~ 320

Output capacitance

Cob

VCB=10V, IE=0

Typ

19

pF

Transition frequency

fT

IC = 0.2A; VCE = 5V

155

MHz

Electrical Characteristics at (Ta = 25°C Unless otherwise specified)

Note:

1. Pulse test tp ≤300μs, Duty cycle ≤2%