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V1.0

10/09/19

Bipolar Transistor

Newark.com/multicomp-pro

Farnell.com/multicomp-pro

Element14.com/multicomp-pro

Description:

PNP Silicon power transistor in a TO-3 package. Designed for

medium-speed switching and amplifier applications.

Features:

• Excellent safe operating areas

• hfe (Min.) 25 and 50 @ Ic = 1A

Absolute Maximum Ratings:

Characteristic

Symbol

Rating

Collector - Base Voltage

Vcbo

80V

Collector - Emitter Voltage

Vceo

80V

Emitter - Base Voltage

Vebo

7V

Continuous Collector Current

Ic

10A

Base Current Continuous

Ib

4A

Total Device Dissipation (Tc = +25°C)

Derate above 25°C

Pd

150W

0.857mW/°C

Operating Junction Temperature Range

Tj

-65°C to +200°C

Parameter

Symbol

Test Conditions

Min. Max. Unit

OFF Characteristics

Collector - Emitter Breakdown Voltage (Note 1) V(br)ceo

Ic = 200mA, Ib = 0

80

-

V

Collector Cut-off Current

Icev

Vce = 80V, Veb(off) = 1.5V

-

1

mA

Emitter Cut-off Current

Iebo

Veb = 7V, Ic = 0

-

5

mA

ON Characteristics

(Note 1)

DC Current Gain

hfe

Vce = 2V, Ic = 1A

50

180

-

Vce = 2V, Ic = 3A

30

-

-

Collector - Emitter Saturation Voltage

Vce(sat)

Ic = 5A, Ib = 0.5A

-

1

V

Base - Emitter on Voltage

Vbe(on)

Ic = 5A, Ib = 2A

-

1.8

Ic = 10A, Ib = 4A

-

4

Small-Signal Characteristics

Current Gain-Bandwidth Product

ft

Vce = 10V, Ic = 500mA, f = 1MHz

4

-

MHz

Electrical Characteristics (Ta = 25°C unless otherwise specified)

Note 1: Pulse Test : Pulse Width % 300μs, Duty Cycle % 2%