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CSD22206WT Datasheet(PDF) 6 Page - Texas Instruments

Part # CSD22206WT
Description  CSD22206W –8-V P-Channel NexFET™ Power MOSFET
PDF  13 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

CSD22206WT Datasheet(HTML) 6 Page - Texas Instruments

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TA - Ambient Temperature (°C)
-50
-25
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
D011
-VDS - Drain-to-Source Voltage (V)
0.1
1
10
20
20
0.1
1
10
100
200
D010
100 ms
10 ms
1 ms
TA - Ambient Temperature (qC)
-75
-50
-25
0
25
50
75
100
125
150
175
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
D008
VGS = -4.5 V
-VSD - Source-to-Drain Voltage (V)
0
0.2
0.4
0.6
0.8
1
0.0001
0.001
0.01
0.1
1
10
D009
TC = -55qC
TC = -40qC
TC = 25qC
TC = 125qC
TC = 150qC
6
CSD22206W
SLPS689 – MAY 2017
www.ti.com
Product Folder Links: CSD22206W
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
Typical MOSFET Characteristics (continued)
TA = 25°C (unless otherwise stated)
ID = –2 A
Figure 8. Normalized On-State Resistance vs Temperature
Figure 9. Typical Diode Forward Voltage
Single pulse, max RθJA = 75°C/W
Figure 10. Maximum Safe Operating Area
Figure 11. Maximum Drain Current vs Temperature



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