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R6502END3 Datasheet(PDF) 2 Page - Rohm |
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R6502END3 Datasheet(HTML) 2 Page - Rohm |
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2 / 14 page ![]() R6502END3 Datasheet l lThermal resistance Parameter Symbol Values Unit Min. Typ. Max. Thermal resistance, junction - case RthJC*4 - - 4.9 ℃/W Thermal resistance, junction - ambient RthJA*5 - - 147 ℃/W Soldering temperature, wavesoldering for 10s Tsold - - 265 ℃ l lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA 650 - - V Zero gate voltage drain current IDSS VDS = 650V, VGS = 0V μA Tj = 25°C - 0.1 100 Tj = 125°C - - 1000 Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V - - ±100 nA Gate threshold voltage VGS(th) VDS = VGS, ID = 40μA 2 - 4 V Static drain - source on - state resistance RDS(on)*6 VGS = 10V, ID = 0.6A Ω Tj = 25°C - 3.05 4.0 Tj = 125°C - - - Gate resistance RG f = 1MHz, open drain - 15 - Ω www.rohm.com © 2022 ROHM Co., Ltd. All rights reserved. 2/11 20231221 - Rev.001 |
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