IRF630FP datasheet(1/9 Pages) STMICROELECTRONICS

Part #	IRF630FP

Description	N - CHANNEL 200V - 0.35ihm - 9A - TO-220/FP MESH OVERLAY] MOSFET

PDF	9 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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IRF630

IRF630FP

N - CHANNEL 200V - 0.35

Ω - 9A - TO-220/FP

MESH OVERLAY

™ MOSFET

s

TYPICAL RDS(on) = 0.35

Ω

s

EXTREMELY HIGH dV/dt CAPABILITY

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

This power MOSFET is designed using he

company’s consolidated strip layout-based MESH

OVERLAY

™ process. This technology matches

and improves the performances compared with

standard parts from various sources.

APPLICATIONS

s

HIGH CURRENT SWITCHING

s

UNINTERRUPTIBLE POWER SUPPLY (UPS)

s

DC/DC COVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT.

®

INTERNAL SCHEMATIC DIAGRAM

February 1999

TO-220

TO-220FP

1

2

3

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

IRF630

IRF630F P

VDS

Drain-source Voltage (VGS = 0)

200

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

200

V

VGS

G ate-source Volt age

± 20

V

ID

Drain Current (continuous) at Tc =25

oC

9

9(**)

A

ID

Drain Current (continuous) at Tc =100

oC5.7

5.7(**)

A

IDM (

•)

Drain Current (pulsed)

36

A

Ptot

T otal Dissipat ion at Tc =25

oC75

25

W

Derating Factor

0.6

0.20

W /

o C

dv/dt (1)

Peak Diode Recovery voltage slope

5

V/ns

VISO

I nsulation W ithstand Voltage (DC)



2000

V

Tstg

Storage Temperature

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 9A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet

(**) Limited only by Maximum Temperature Allowed

TYPE

VDSS

RDS(on)

ID

IRF630

IRF630F P

200 V

<0.40

Ω

<0.40

Ω

9A

1/9

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IRF630FP Datasheet(PDF) 1 Page - STMicroelectronics

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