ACT4088

Rev PrA, 24-Jul-07

- 3 -

www.active-semi.com

Copyright © 2007 Active-Semi, Inc.

PARAMETER

VALUE

UNIT

IN Supply Voltage

-0.3 to 32

V

SW Voltage

V

BST Voltage

V

EN, FB Voltage

-0.3 to 6

V

Continuous SW Current

Internally Limited

A

Junction to Ambient Thermal Resistance (

θ

220

°C/W

Maximum Power Dissipation

0.5

W

Operating Junction Temperature

-40 to 150

°C

Storage Temperature

-55 to 150

°C

Lead Temperature (Soldering, 10 sec)

300

°C

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Input Voltage

4.5

28

V

Under Voltage Lockout Voltage

Input Voltage Rising

4

4.2

4.49

V

Under Voltage Lockout Hysteresis

250

mV

Feedback Voltage

4.75V

≤ V

0.79

0.81

0.83

V

Frequency Foldback Threshold

250

mV

High-side Switch On Resistance

0.300

Ω

Low-side Switch On Resistance

15

Ω

SW Leakage

1

10

µA

Current Limit

EN = G, SW = G

1.8

A

Switching Frequency

1.2

1.4

1.7

MHz

Foldback Switching Frequency

467

kHz

Maximum Duty Cycle

92

%

Minimum On-Time

75

ns

EN Threshold Voltage

EN Rising

1.12

1.24

1.36

V

EN Hysteresis

EN Rising

100

mV

EN Internal Pull-up Current

2

µA

Supply Current in Shutdown

15

30

µA

Supply Current in Operation

1

2

mA

Thermal Shutdown Temperature

160

°C

Thermal Shutdown Hysteresis

10

°C

ELECTRICAL CHARACTERISTICS

: Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods may

affect device reliability.