BAS40T datasheet(1/3 Pages) HUIXIN

Part #	BAS40T

Description	Surface Mount Schottky Barrier Diodes

PDF	3 Pages

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Manufacturer	HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]

Direct Link	http://www.hxkj.hk

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BAS40T / -04T / -05T / -06T

Surface Mount Schottky Barrier Diodes

Features

• Low forward voltage

• Fast switching

Absolute Maximum Ratings (Ta = 25℃)

Parameter

Symbol

Value

Unit

Repetitive Peak Reverse Voltage

VRRM

40

V

DC Blocking Voltage

VR

40

V

Average Rectified Forward Current

IF(AV)

200

mA

Peak Forward Surge Current (at tp ≤ 8.3 ms)

IFSM

600

mA

Power Disspation

PD

150

mW

Junction Temperature

TJ

150

℃

Storage Temperature Range

TStg

- 65 to + 150

℃

Characteristics at Ta = 25℃

Parameter

Symbol

Min.

Max.

Unit

Reverse Breakdown Voltage

at IR = 10 μA

V(BR)R

40

-

V

Forward Voltage

at IF = 1 mA

at IF = 40 mA

VF

-

0.38

1

V

Reverse Current

at VR = 30 V

IR

-

200

nA

Total Capacitance

at VR = 0 V, f = 1 MHz

CT

-

5

pF

Reverse Recovery Time

at IF = IR = 10 mA, Irr = 0.1 IR

trr

-

5

ns

1

3

2

3

1

2

1

3

2

1

3

BAS40T

BAS40-04T

BAS40-05T

BAS40-06T

+86-769-22857832

huixin@hxkj.hk

Rev.01

Ｐａｇｅ１ｏｆ３

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BAS40T Datasheet(PDF) 1 Page - Guangdong Huixin Electronic Technology Co., Ltd.

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