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BAS70WT Datasheet(PDF) 1 Page - Guangdong Huixin Electronic Technology Co., Ltd.

Part # BAS70WT
Description  Surface Mount Schottky Barrier Diode
PDF  3 Pages
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Manufacturer  HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]
Direct Link  http://www.hxkj.hk
Logo HUIXIN - Guangdong Huixin Electronic Technology Co., Ltd.

BAS70WT Datasheet(HTML) 1 Page - Guangdong Huixin Electronic Technology Co., Ltd.

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BAS70WT
Surface Mount Schottky Barrier Diode
Features
• Low forward voltage
• Fast switching
• Halogen and Antimony Free(HAF),
RoHS compliant
Absolute Maximum Ratings (Ta = 25℃)
Parameter
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
VRRM
70
V
Peak Reverse Voltage
VRwM
70
V
DC Blocking Voltage
VR
70
V
RMS Reverse Voltage
VRMS
49
V
Average Forward Rectified Current
IF(AV)
70
mA
Peak Forward Surge Current (at tp ≤ 1 s)
IFSM
100
mA
Power Disspation
1)
PD
150
mW
Operating Junction Temperature Range
TJ
- 55 to + 125
℃
Storage Temperature Range
TStg
- 55 to + 150
℃
Thermal Characteristics
Parameter
Symbol
Max.
Unit
Thermal Resistance from Juntion to Ambient
1)
RθJA
667
℃/W
1) Device mounted on FR-4 PC board with recommended pad layout.
Characteristics at Ta = 25
℃
Parameter
Symbol
Min.
Max.
Unit
Reverse Breakdown Voltage
at IR = 100 μA
V(BR)R
70
-
V
Forward Voltage
at IF = 1 mA
at IF = 15 mA
VF
-
-
0.41
1
V
Reverse Current
at VR = 50 V
IR
-
100
nA
Total Capacitance
at VR = 0 V, f = 1 MHz
CT
-
2
pF
Reverse Recovery Time
at IF = IR = 10 mA to IR = 1 mA, RL = 100 Ω , Irr = 0.1× IR
trr
-
5
ns
Anode
2
Top View
Simplified outline SOD-523 and symbol
1
2
PINNING
1
PIN
Cathode
DESCRIPTION
1
3


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