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IRFBC40 Datasheet(PDF) 1 Page - STMicroelectronics

Part # IRFBC40
Description  N - CHANNEL 600V - 1.0ohm - 6.2 A - TO-220 PowerMESH] MOSFET
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

IRFBC40 Datasheet(HTML) 1 Page - STMicroelectronics

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IRFBC40
N - CHANNEL 600V - 1.0
Ω - 6.2 A - TO-220
PowerMESH
™ MOSFET
s
TYPICAL RDS(on) = 1.0
Ω
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
VERY LOW INTRINSIC CAPACITANCES
s
GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY
™ process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
®
INTERNAL SCHEMATIC DIAGRAM
August 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
VDS
Drain-source Volt age (VGS =0)
600
V
VDGR
Drain- gate Voltage (RGS =20 k
Ω)
600
V
VGS
Gat e-source Voltage
± 20
V
ID
Drain Current (continuous) at Tc =25
o C2
A
ID
Drain Current (continuous) at Tc =100
oC3.9
A
IDM(
•)
Drain Current (pulsed)
25
A
Ptot
Tot al Dissipation at Tc =25
oC125
W
Derating F act or
1.0
W/
oC
dv/dt(1)
Peak Diode Recovery voltage slope
3
V/ ns
Tstg
Storage T emperat ure
-65 to 150
oC
Tj
Max. O perating Junction Temperature
150
oC
(
•) Pulse width limited by safe operating area
(1)ISD
≤ 6.2 A, di/dt ≤ 80 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX
TYPE
VDSS
RDS(on)
ID
IRFBC40
600 V
< 1.2
Ω
6.2 A
1
2
3
TO-220
1/8


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