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2

FDMS8018 Rev.1.2

Electrical Characteristics T

J = 25 °C unless otherwise noted

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

BVDSS

Drain to Source Breakdown Voltage

ID = 250 μA, VGS = 0 V

30

V

ΔBV

DSS

ΔT

J

Breakdown Voltage Temperature

Coefficient

ID = 250 μA, referenced to 25 °C

14

mV/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 24 V, VGS = 0 V

1

μA

IGSS

Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V

100

nA

VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = 250 μA

1.0

1.5

3.0

V

ΔV

GS(th)

ΔT

J

Gate to Source Threshold Voltage

Temperature Coefficient

ID = 250 μA, referenced to 25 °C

-6

mV/°C

rDS(on)

Static Drain to Source On Resistance

VGS = 10 V, ID = 30 A

1.5

1.8

m

Ω

VGS = 4.5 V, ID = 26 A

1.9

2.4

VGS = 10 V, ID = 30 A, TJ = 125 °C

2.2

2.7

gFS

Forward Transconductance

VDS = 5 V, ID = 30 A

194

S

Ciss

Input Capacitance

VDS = 15 V, VGS = 0 V,

f = 1 MHz

3935

5235

pF

Coss

Output Capacitance

1380

1835

pF

Crss

Reverse Transfer Capacitance

137

210

pF

Rg

Gate Resistance

0.9

Ω

td(on)

Turn-On Delay Time

VDD = 15 V, ID = 30 A,

VGS = 10 V, RGEN = 6 Ω

15

27

ns

tr

Rise Time

7.3

15

ns

td(off)

Turn-Off Delay Time

38

62

ns

tf

Fall Time

4.8

10

ns

Qg

Total Gate Charge

VGS = 0 V to 10 V

VDD = 15 V,

ID = 30 A

58

61

nC

Qg

Total Gate Charge

VGS = 0 V to 4.5 V

28

39

nC

Qgs

Gate to Source Charge

10.3

nC

Qgd

Gate to Drain “Miller” Charge

7.7

nC

VSD

Source to Drain Diode Forward Voltage

VGS = 0 V, IS = 2.1 A

(Note 2)

0.67

1.1

V

VGS = 0 V, IS = 30 A

(Note 2)

0.77

1.2

trr

Reverse Recovery Time

IF = 30 A, di/dt = 100 A/μs

43

69

ns

Qrr

Reverse Recovery Charge

25

40

nC

trr

Reverse Recovery Time

IF = 30 A, di/dt = 300 A/μs

34

55

ns

Qrr

Reverse Recovery Charge

46

72

nC

Notes:

1. RθJA is determined with the device mounted on a 1 in

2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by

the user's board design.

2. Pulse Test: Pulse Width < 300

μs, Duty cycle < 2.0%.

3. Starting TJ = 25 °C; N-ch: L = 0.3 mH, IAS = 29 A, VDD = 27 V, VGS = 10 V.

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.

5. Pulsed Id please refer to Fig 11 SOA graph for more details.

6. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.

50 °C/W when mounted on a

1 in2 pad of 2 oz copper

125 °C/W when mounted on a

minimum pad of 2 oz copper.

a)

b)