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FPD7612 Datasheet(PDF) 1 Page - Filtronic Compound Semiconductors |
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FPD7612 Datasheet(HTML) 1 Page - Filtronic Compound Semiconductors |
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1 / 4 page  GENERAL PURPOSE PHEMT Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com 1 Datasheet v3.0 FPD7612 FEATURES: • 20.5 dBm Output Power (P1dB) • 13 dB Power Gain at 12 GHz • 17 dB Maximum Stable Gain at 12 GHz • 11 dB Maximum Stable Gain at 18 GHz • 45% Power-Added Efficiency GENERAL DESCRIPTION: The FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 200 µm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. ELECTRICAL SPECIFICATIONS 1: LAYOUT: TYPICAL APPLICATIONS: • Narrowband and broadband high- performance amplifiers • SATCOM uplink transmitters • PCS/Cellular low-voltage high-efficiency output amplifiers • Medium-haul digital radio transmitters PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Power at 1dB Gain Compression P1dB VDS = 5 V; IDS = 50% IDSS 19 20.5 dBm Power Gain at P1dB G1dB VDS = 5 V; IDS = 50% IDSS 11.0 13.0 dB Noise FIgure N.F. min VDS = 5 V; IDS = 50% IDSS 1.2 dB Power-Added Efficiency PAE VDS = 5V; IDS = 50% IDSS; POUT = P1dB 45 % Maximum Stable Gain (S21/S12) f = 12 GHz f = 24 GHz MSG VDS = 5 V; IDS = 50% IDSS 16 9.5 17 11 dB Saturated Drain-Source Current IDSS VDS = 1.3 V; VGS = 0 V 45 60 75 mA Maximum Drain-Source Current IMAX VDS = 1.3 V; VGS ≅ +1 V 120 mA Transconductance GM VDS = 1.3 V; VGS = 0 V 80 mS Gate-Source Leakage Current IGSO VGS = -5 V 1 10 µA Pinch-Off Voltage |VP| VDS = 1.3 V; IDS = 0.2 mA 0.7 1.0 1.3 V Gate-Source Breakdown Voltage |VBDGS| IGS = 0.2 mA 12.0 14.0 V Gate-Drain Breakdown Voltage |VBDGD| IGD = 0.2 mA 14.5 16.0 V Thermal Resistivity (see Notes) θJC VDS > 3V 280 °C/W Thermal Resistivity (see Notes) θJC VDS > 6V 20 °C/W Note: 1 T Ambient = 22°C; RF specifications measured at f = 12 GHz using CW signal |
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