BSP52Q datasheet(2/4 Pages) HUIXIN

Part #	BSP52Q

Description	NPN Silicon Darlington Transistor

PDF	4 Pages

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Manufacturer	HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]

Direct Link	http://www.hxkj.hk

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Characteristics at Ta = 25℃

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at VCE = 10 V, IC = 150 mA

at VCE = 10 V, IC = 500 mA

hFE

1000

2000

Collector Emitter Cutoff Current

at VCE = 80 V

ICEO

µA

Emitter Base Cutoff Current

at VEB = 4 V

IEBO

Collector Base Breakdown Voltage

at IC = 100 µA

V(BR)CBO

Emitter Base Breakdown Voltage

at IE = 1 mA

V(BR)EBO

Collector Emitter Saturation Voltage

at IC = 500 mA, IB = 0.5 mA

VCE(sat)

1.3

Base Emitter Saturation Voltage

at IC = 500 mA, IB = 0.5 mA

VBE(sat)

1.9

Rise Time

at VCC = 10 V, IC = 150 mA, IB1 = 0.15 mA

155

Delay Time

at VCC = 10 V, IC = 150 mA, IB1 = 0.15 mA

205

Storage Time

at VCC = 10 V, IC = 150 mA, IB1 = 0.15 mA, IB2 = 0.15 mA

420

Fall Time

at VCC = 10 V, IC = 150 mA, IB1 = 0.15 mA, IB2 = 0.15 mA

365

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