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Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
RF MEMS
18
3
4
5
11
6
12
13
20
HB INPUT
LB INPUT
PA
Power Control Circuit
and Switch Decoder
pHEMT SP4T
Switch
RX1
RX0
2
19
GND
21
GND
22
GND
1
GND
7NC
8GND
9GND
14
15
16
17
10 NC
RF4180
DUAL-BAND GSM900/DCS1800
TRANSMIT MODULE
The RF4180 is a dual band (GSM900/DCS1800) transmit module with two sym-
metrical receive ports and GSM/GPRS Class 12 compliant. This transmit module
builds upon RFMD’s leading power amplifier with PowerStar® integrated power
control technology, pHEMT switch technology and integrated transmit filtering for
best-in-class harmonics. This results in high performance, a reduced solution size,
and the ease of implementation simplifies transmitter design. The device is
designed for use as the final portion of the transmit in GSM900/DCS1800 and
eliminates the need for PA to antenna switch module matching. The device provides
50
Ω matched input and output ports with no matching required.
The RF4180 features RFMD’s latest integrated power flattening circuit, which signif-
icantly reduces current and power variation into load mismatch. The RF4180 also
integrates an ESD filter to provide excellent ESD protection at the antenna port. The
RF4180 is designed to provide maximum efficiency at rated POUT.
Features
Enhanced Performance
Transmit Module
Small Form Factor
6mmx8mmx1.2mm
No External Routing
High Efficiency @ rated POUT
VBATT=3.5V
GSM900 43%
DCS1800 38%
Low RX Insertion Loss
Symmetrical RX Ports
0dBm to 6dBm Drive Level,
>50dB of Dynamic Range
Excellent ESD Protection at
Antenna Port: 8kV
Integrated Power Flattening
Circuit
Applications
3V Dual-Band GSM/GPRS
Handsets
GSM900/DCS1800 Products
GPRS Class 12 Compatible
Portable Battery-Powered
Equipment
RF4180
Dual-Band GSM900/DCS1800 Transmit Module
RF4180SB
Transmit Module 5-Piece Sample Pack
RF4180PCBA-41X
Fully Assembled Evaluation Board
Prelim DS080125
Proposed
CONFIDENTIAL: NDA REQUIRED
RoHS Compliant and Pb-Free Product
Package Style: Module 6mmx8mm