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HSD12FDT Datasheet(PDF) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd. |
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HSD12FDT Datasheet(HTML) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd. |
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2 / 4 page ![]() HSD12FDT Transient Voltage Suppressor ABSOLUTE MAXIMUM RATING Symbol Parameter Value Units VESD ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) ±30 ±30 kV PPP Peak Pulse Power (8/20μs) 2275 W TJ Junction Temperature 125 C TSTG Storage Temperature -55~150 C ELECTRICAL CHARACTERISTICS (Tamb=25 C) Symbol Parameter Test Condition Min Typ Max Units VRWM Reverse Working Voltage 12.0 V VBR Reverse Breakdown Voltage IT = 1mA 12.7 V IR Reverse Leakage Current VRWM = 12V 100 n A VC Clamping Voltage IPP = 25A, tp = 8/20μs 25 V IPP = 65A, tp = 8/20μs 35 V CJ Junction Capacitance VR = 0V, f = 1MHz 510 pF 2 4 |
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