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ES1F Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited

Part # ES1F
Description  FAST RECOVERY RECTIFIER
PDF  2 Pages
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Manufacturer  BILIN [Galaxy Semi-Conductor Holdings Limited]
Direct Link  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

ES1F Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited

  ES1F Datasheet HTML 1Page - Galaxy Semi-Conductor Holdings Limited ES1F Datasheet HTML 2Page - Galaxy Semi-Conductor Holdings Limited  
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background image
1
0
10
5
ES1 F
10
50
20
30
ES1 Z
ES1
ES1 A
0
0.2
050
0.4
0.6
0.8
1.0
25
75
100
125
150
ES1Z
ES1
ES1A
ES1F
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.01
0.02
0.06
0.04
0.1
0.2
0.4
1.0
2
4
10
100
1.0
2.0
3.0
4.0
5.0
TJ=25
Pulse Width=300
µS
ES1~
ES1A
ES1F~
ES1Z
PULSE
GENERATOR
(NOTE2)
D.U.T.
1
N.1.
50
N.1.
OSCILLOSCOPE
(NOTE 1)
(+)
50VDC
(APPROX)
(-)
10
N.1.
(-)
(+ )
BLGALAXY ELECTRICAL
www.galaxycn.com
Document Number 0261063
2.
trr
-1.0A
-0.25A
0
+0.5A
1cm
NUMBER OF CYCLES AT60Hz
REVERSE VOLTAGE,VOLTS
ES1F---ES1A
SETTIMEBASEFOR50/100 ns /cm
AMBIENT TEMPERATURE,
RATINGSANDCHARACTERISTICCURVES
NOTES: 1. RISETIME=7ns MAX. INPUTIMPEDANCE=1M . 22PF
FIG.1 -- REVERSE RECOVERYTIMECHARACTERISTIC AND TEST CIRCUIT DIAGRAM
FIG.2 -- FORWARDDERATING CURVE
FIG.4-- PEAK FORWARD SURGECURRENT
FIG.5-- TYPICAL JUNCTIONCAPACITANCE
2. RISETIME=10ns MAX. SOURCEIMPEDANCE=50
FIG.3 -- TYPICAL FORWARDCHARACTERISTIC
INSTANTANEOUS FORWARDCURRENT, VOLTS
.2
TJ=25
f=1MHz
1
.1
2
4
.4
1.0
2
40
10
20
60
100
4
10
20
40
100



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