FEP16AT - FEP16JT, Rev. C

2001 Fairchild Semiconductor Corporation

FEP16AT - FEP16JT

Fast Rectifiers (Glass Passivated)

Absolute Maximum Ratings*

T

A

= 25°C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics

T

A

= 25°C unless otherwise noted

Features

• Low forward voltage drop.

• High surge current capacity.

• High current capability.

• High reliability.

TO-220AB

1

2

3

Thermal Characteristics

Symbol

Parameter

Device

Units

16AT

16BT

16CT

16DT

16FT

16GT

16HT

16JT

VF

Forward Voltage @ 8.0A

0.95

1.3

1.5

V

trr

Reverse Recovery Time

I

F = 0.5 A, IR = 1.0 A, IRR = 0.25 A

35

50

ns

I

R

Reverse Current @ rated V

R

T

A = 25°C

T

A = 100°C

10

500

µA

µA

C

T

Total Capacitance

V

R = 4.0. f = 1.0 MHz

85

60

pF

Symbol

Parameter

Value

Units

16AT

16BT

16CT

16DT

16FT

16GT

16HT

16JT

VRRM

Maximum Repetitive Reverse

Voltage

50

100

150

200

300

400

500

600

V

IF(AV)

Average Rectified Forward Current,

.375 " lead length @ T

A = 100°C

16

A

IFSM

Non-repetitive Peak Forward Surge

Current

8.3 ms Single Half-Sine-Wave

200

A

T

stg

Storage Temperature Range

-55 to +150

°C

TJ

Operating Junction Temperature

-55 to +150

°C

Symbol

Parameter

Value

Units

P

D

Power Dissipation

8.33

W

RθJA

Thermal Resistance, Junction to Ambient

15

°C/W

RθJL

Thermal Resistance, Junction to Lead

2.2

°C/W

PIN 1

PIN 3

+

CASE

PIN 2

Positive CT

PIN 1

PIN 3

-

CASE

PIN 2

Negative CT

Suffix "A"

PIN 1

PIN 3

AC

CASE

PIN 2

Doubler

Suffix "D"

• Average Forward Current Rating at 16A (8A per Diode).