N-Channel Enhancement Mode Power MOSFET

Description

The

uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications.

General Features

●

VDS =30V,ID =140A

RDS(ON) <3.5 mΩ @ VGS=10V

RDS(ON) <4.0mΩ @ VGS=4.5V

●

High density cell design for ultra low Rdson

●

Fully characterized avalanche voltage and current

●

Good stability and uniformity with high EAS

●

Excellent package for good heat dissipation

●

Special process technology for high ESD capability

Application

●

Power switching application

●

Hard switched and high frequency circuits

●

Uninterruptible power supply

Schematic diagram

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

TO-263-2L

-

-

-

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

Drain Current-Continuous

ID

140

A

Drain Current-Continuous(TC=100℃)

ID (100℃)

105

A

Pulsed Drain Current

IDM

560

A

Maximum Power Dissipation

PD

130

W

Derating factor

0.87

W/℃

Single pulse avalanche energy

(Note 5)

EAS

850

mJ

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 175

℃

FNK03N02D

FNK-Semiconductor

1/7

Jun.2017.Rev.1.0

To-263 Top View

FNK

FNK03N02D

FNK03N02D

FNK03N02D