Aug. 2021 Version 2.4

Magnachip Semiconductor Ltd.

2

Ordering Information

Part Number

Marking

Temp. Range

Package

Packing

RoHS Status

MDF11N60TH

MDF11N60

-55~150oC

TO-220F

Tube

Halogen Free

Electrical Characteristics (Ta = 25oC)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = 250μA, VGS = 0V

600

-

-

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250μA

3.0

-

5.0

Drain Cut-Off Current

IDSS

VDS = 600V, VGS = 0V

-

-

1

μA

Gate Leakage Current

IGSS

VGS = ±30V, VDS = 0V

-

-

100

nA

Drain-Source ON Resistance

RDS(ON)

VGS = 10V, ID = 5.5A

-

0.45

0.55

Ω

Forward Transconductance

gfs

VDS = 30V, ID = 5.5A

-

13

-

S

Dynamic Characteristics

Total Gate Charge

Qg

VDS = 480V, ID = 11A, VGS = 10V

(3)

-

38.4

-

nC

Gate-Source Charge

Qgs

-

11.2

-

Gate-Drain Charge

Qgd

-

14

-

Input Capacitance

Ciss

VDS = 25V, VGS = 0V, f = 1.0MHz

-

1700

-

pF

Reverse Transfer Capacitance

Crss

-

6.2

-

Output Capacitance

Coss

-

184

-

Turn-On Delay Time

td(on)

VGS = 10V, VDS = 300V, ID = 11A,

RG = 25Ω

(3)

-

38

-

ns

Rise Time

tr

-

50

-

Turn-Off Delay Time

td(off)

-

76

-

Fall Time

tf

-

33

-

Drain-Source Body Diode Characteristics

Maximum Continuous Drain to

Source Diode Forward Current

IS

-

11

-

A

Source-Drain Diode Forward Voltage

VSD

IS = 11A, VGS = 0V

-

-

1.4

V

Body Diode Reverse Recovery Time

trr

IF = 11A, dl/dt = 100A/μs

(3)

-

430

-

ns

Body Diode Reverse Recovery Charge

Qrr

-

4.0

-

μC

Note :

1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.

2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.

3.

ISD ≤11A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C

4. L=10.9mH,

IAS=11A, VDD=50V, Rg =25Ω, Starting TJ=25°C