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BAS85 Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited

Part # BAS85
Description  SMALL SIGNAL SCHOTTKY DIODES
PDF  2 Pages
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Manufacturer  BILIN [Galaxy Semi-Conductor Holdings Limited]
Direct Link  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

BAS85 Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited

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0.022(0.559)
0.016(0.406)
0.016(0.406)
0.022(0.559)
0.131(3.327)
0.145(3.683)
SOLDERABLE ENDS
1st BAND
2nd BAND
(1.676)
(1.524)
0.066
0.060
D1=
D2=D1
0.008(0.20)
0
D2
FEATURES
For general purpose applications
This diode features very low turn-on voltage
and fast switching. Thes e devices are protected
MECHANICAL DATA
Case:JEDEC mini-melf,glas s cas e
Weight: Approx.0.031 grams
Symbols
Min.
UNITS
30.0
V
V
V
V
V
V
A
pF
ns
/W
0.4
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
0.5
Thermal resistance junction to ambient
CJ
0.32
Pulse test tp<300
s,
<2%
@ IF=0.1mA
@ IF=1mA
Storage temperature range
TSTG
Reverse breakdow n voltage
Symbols
VR
0.24
@ IF=10mA
@ IF=30mA
IR
BAS85
by a PN junction guard ring against exces sive
SMALL SIGNAL SCHOTTKY DIODES
VOLTAGE RANGE: 30 V
CURRENT: 0.2 A
Mini-melf
GALAXY ELECTRICAL
voltage, such as electrostatic discharges
Pow er dissipation
@ TA=65
UNITS
c-55 ---+ 125
Polarity: Color band denotes cathode end
ABSOLUTE RATINGS
VR
IF
IFM
IFSM
Ptot
TJ
TA
600
1)
125
V
mA
mA
30.0
200
1)
300
1)
mA
mW
Max.
Typ.
c-55 ---+ 150
ELECTRICAL CHARACTERISTICS
Junction temperature
Ambient operating temperature range
RθJA
@ IF=100mA
Leakage current VR=25V
Junction capacitance at VR=1V,f=1MHz
Reverse recovery time @ IF=10mA,IR=10mA,IR=1mA
VF
Forw ard voltage
2.0
10
trr
5
430
1)
Value
200
1)
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
Continuous reverse voltage
Forw ard continuous current
@
TA=25
Peak forw ard current
@
TA=25
Surge forw ard current
@
tp<1s,TA=25
0.8
www.galaxycn.com
BL
Document Number 0265016
1.
BLGALAXY ELECTRICAL


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