FEATURES

◇ Metal-Semiconductor junction with guard ring

◇ Epitaxial construction

◇ Low forward voltage drop,low switching losses

◇ High surge capability

MECHANICAL DATA

◇ Case:JEDEC DO--41,molded plastic

◇ Terminals: Axial lead ,solderable per

MIL- STD-202,Method 208

◇ Polarity: Color band denotes cathode

◇ Weight: 0.012 ounces,0.34 grams

◇ Mounting position: Any

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

SB

130

SB

140

SB

150

SB

160

SB

170

SB

180

SB

190

SB

1A0

UNITS

Maximum recurrent peak reverse voltage

30

40

50

60

70

80

90

100

V

Maximum RMS voltage

21

28

35

42

49

56

63

70

V

Maximum DC blocking voltage

30

40

50

60

70

80

90

100

V

Maximum average forward rectified current

9.5mm lead length,

(see fig.1)

Peak forward surge current

8.3ms single half-sine-wave

superimposed on rated load

Maximum reverse current

Typical junction capacitance

(Note1)

pF

Typical thermal resistance

(Note2)

℃/W

Operating junction temperature range

℃

Storage temperature range

℃

NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2.Thermalresistance junction to ambient

BL

GALAXY ELECTRICAL

SB120---SB1A0

50

- 55 --- + 150

- 55 --- + 150

www.galaxycn.com

0.85

0.5

5.0

110

80

A

◇ For use in low voltage,high frequency inverters free

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE: 20 --- 100 V

CURRENT: 1.0 A

DO - 41

◇ The plastic material carries U/L recognition 94V-0

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

A

Maximum instantaneous forward voltage

@ 1.0A

mA

V

0.5

0.7

10.0

- 55 --- + 125

SB

120

20

14

20

1.0

40.0

Document Number 0266004

1.