1 of 10
Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Ordering Information
1
2
3
6
5
4
VCC
GND
RF IN
RF OUT
GND
GC
ATTEN
RF2376
CELLULAR TDMA/CDMA LINEAR
VARIABLE GAIN AMPLIFIER
The RF2376 is a linear variable gain amplifier suitable for use in TDMA and CDMA
systems in the cellular band. The features of this device include linear gain control,
high gain, and low noise figure. The IC is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process and is featured in
an industry-standard miniature 6-lead plastic SOT package.
Features
50dB Linear Gain Control
Range
27dB Maximum Gain
Single 2.7V to 3.3V Supply
30mA Supply Current
High Linearity
7dB Noise Figure
Applications
CDMA Cellular Handsets
TDMA Cellular Handsets
RF2376Cellular TDMA/CDMA Linear Variable Gain Amplifier
RF2376 PCBA
Fully Assembled Evaluation Board
Rev A2 DS010829
Preliminary
Package: SOT23-6
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
