1 of 6
Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Ordering Information
RF IN
GND1
BIAS
RF OUT
GND2
GAIN SELECT
Logic
Control
1
2
3
6
5
4
RF2370
3V LOW NOISE AMPLIFIER
The RF2370 is a switchable low noise amplifier with a very high dynamic
range designed for digital cellular and WLAN applications. The device
functions as an outstanding front end low noise amplifier. The bias current
may be set externally. The IC is featured in a standard SOT 6-lead plastic
package.
Features
Low Noise and High Intercept
Point
Adjustable Bias Current
Power Down Control
Low Insertion Loss Bypass
Feature
1.8V to 5V Operation (See
Note: Page 2)
1.5GHz to 3.8GHz Operation
Applications
WLAN LNA with Bypass Fea-
ture
CDMA PCS LNA with Bypass
Feature
MMDS LNA with Bypass Fea-
ture
General Purpose Amplifica-
tion
Commercial and Consumer
Systems
RF2370
3V Low Noise Amplifier
RF2370PCBA-410
Fully Assembled Evaluation Board (WLAN) usable from
1.9GHz to 4GHz with standard tune
Rev A7 DS071115
RoHS Compliant & Pb-Free Product
Package Style: SOT 6-Lead
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