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H6593C Datasheet(PDF) 4 Page - Guangdong Huixin Electronic Technology Co., Ltd.

Part # H6593C
Description  40V N-CHANNEL MOSFET
PDF  4 Pages
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Manufacturer  HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]
Direct Link  http://www.hxkj.hk
Logo HUIXIN - Guangdong Huixin Electronic Technology Co., Ltd.

H6593C Datasheet(HTML) 4 Page - Guangdong Huixin Electronic Technology Co., Ltd.

  H6593C Datasheet HTML 1Page - Guangdong Huixin Electronic Technology Co., Ltd. H6593C Datasheet HTML 2Page - Guangdong Huixin Electronic Technology Co., Ltd. H6593C Datasheet HTML 3Page - Guangdong Huixin Electronic Technology Co., Ltd. H6593C Datasheet HTML 4Page - Guangdong Huixin Electronic Technology Co., Ltd.  
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background image
0
2
4
6
8
10
0
20
40
60
80
100
120
Q
g (nC)
Figure 7: Gate-Charge Characteristics
0
2000
4000
6000
8000
10000
0
5
10
15
20
25
30
35
40
45
V
DS (Volts)
Figure 8: Capacitance Characteristics
C
iss
0
200
400
600
800
1000
0.0001 0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.01
0.1
1
10
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance (Note F)
C
oss
C
rss
V
DS=22.5V
I
D=20A
Single Pulse
D=T
on/T
T
J,PK=TC+PDM.Z
qJC.RqJC
T
on
T
P
DM
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)=150°C
T
C=25°C
10
ms
0.0
0.1
1.0
10.0
100.0
1000.0
0.01
0.1
1
10
100
1000
V
DS (Volts)
V
GS> or equal to 4.5V
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
ms
1ms
DC
R
DS(ON)
limited
T
J(Max)=150°C
T
C=25°C
100
ms
10ms
RqJC=0.6°C/W
4
4
0
50
100
150
200
250
0
25
50
75
100
125
150
T
CASE (°C)
Figure 11: Power De-rating (Note F)
0
50
100
150
0
25
50
75
100
125
150
T
CASE (°C)
Figure 12: Current De-rating (Note F)



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