Electrical Characteristics (@TA = +25°C unless otherwise specified.)

A. The value of RJA is measured with the device mounted on 1in

2 FR-4 board with 1oz. Copper, in a still air environment with T

A =25°

C. The value in any given

application depends on the user's specific board design.

B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance and is more useful in setting the upper dissipation limit for cases where

additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ=25°C.

D. The RJA is the sum of the thermal impedance from junction to case RJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

s pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted on 1in

2 FR-4 board with 1oz. Copper, in a still air

environment with TA=25℃

G. The maximum current rating is package limited

Symbol

Parameter

Conditions

Min

Typ

Max

Units

STATIC PARAMETERS

BVDSS

Drain-Source Breakdown Voltage

ID=-250A, VGS=0V

-30

V

IDSS

Zero Gate Voltage Drain Current

VDS=-30V, VGS=0V

-1

A

TJ=55

℃

-5

IGSS

Gate-Body leakage current

VDS=0V, VGS= ±20

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS ID=-250A

-1.1

-1.58

-2.1

V

RDS(ON)

Static Drain-Source On-Resistance

VGS=-10V, ID=-20A

6

7.4

m



TJ=125

℃

9.1

11.3

VGS=-4.5V, ID=-16A

8.6

10.6

m



gFS

Forward Trans conductance

VDS=-5V, ID=-20A

70

S

VSD

Diode Forward Voltage

IS=-1A,VGS=0V

-0.7

-1

V

IS

Maximum Body-Diode Continuous Current

-34

A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

VGS=0V, VDS=-15V,

f=1MHz

3406

pF

Coss

Output Capacitance

369

pF

Crss

Reverse Transfer Capacitance

306

pF

Rg

Gate resistance

f=1MHz

1

4.6

9



SWITCHING PARAMETERS

Qg

Total Gate Charge

VGS=-10V, VDS=-15V,

ID=-20A

69.8

nC

Qgs

Gate Source Charge

13.6

nC

Qgd

Gate Drain Charge

14

nC

tD(on)

Turn-On Delay Time

VGS=-10V, VDS=-15V,

RL=0.75

, R

GEN=3

11.3

ns

tr

Turn-On Rise Time

71.3

ns

tD(off)

Turn-Off Delay Time

95

ns

tf

Turn-Off Fall Time

82

ns

trr

Body Diode Reverse Recovery Time

IF=-20A, dI/dt=100A/s

15.2

ns

Qrr

Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/s

1.6

nC

2

6