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H173N4HD Datasheet(PDF) 3 Page - Guangdong Huixin Electronic Technology Co., Ltd. |
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H173N4HD Datasheet(HTML) 3 Page - Guangdong Huixin Electronic Technology Co., Ltd. |
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3 / 6 page ![]() +86-769-22857832 huixin@hx kj.hk Rev.01 Page 3 of 6 Typical Characteristics Fig 1. Typical Output Characteristics Figure 2. On-Resistance vs. Gate-Source Voltage Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. Normalized On-Resistance vs. Junction Temperature Figure 5. Typical Transfer Characteristics Figure 6. Typical Source-Drain Diode Forward Voltage 0 1 2 3 4 5 0 5 10 15 20 I D (A) V GS=10V V GS=6V 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 Temperature (°C) I D=20A V GS=10V V GS=6V 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 0.0 0.2 0.4 0.6 0.8 1.0 V SD (V) 25°C 125°C 1 2 3 4 2 4 6 8 10 V GS (V) I D=20A 125°C 25°C 0 5 10 15 20 1 2 3 4 5 6 V GS(V) 125℃ 25℃ V DS=5V 0 10 20 30 40 50 60 0 0.5 1 1.5 V DS (V) 6V 5V 10V Vgs=4.5V |
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