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V1.0

17/09/19

Low Power Bipolar Transistor

Newark.com/multicomp-pro

Farnell.com/multicomp-pro

Element14.com/multicomp-pro

Electrical Characteristics (Ta = 25°C unless otherwise specified)

Description

Symbol

Test Condition

TBC635

Units

Collector-Emitter Voltage

VCEO*

IC = 10mA, IB = 0

>80

V

Collector-Base Voltage

VCBO

IC = 100µA, IE = 0

Emitter-Base Voltage

VEBO

IE = 10µA, IC = 0

>5

Collector Cut off Current

ICBO

VCB = 30V, IE = 0

Ta = 125°C

VCB = 30V, IE = 0

<100

<10

nA

µA

Base Emitter On Voltage

VBE (on)*

IC = 500mA, VCE = 2V

<1

V

Collector Emitter Saturation Voltage

VCE (sat)*

IC = 500mA, IB = 50mA

<0.5

DC Current Gain

hFE*

IC = 5mA, VCE = 2V

IC = 150mA, VCE = 2V

Group-10

Group-16

IC = 500mA, VCE = 2V

>25

-

40 - 160

63 - 160

100 - 250

>25

Dynamic Characteristics

Transistors Frequency

fT

IC = 50mA, VCE = 2V,

f = 100MHz

200 (Typical)

MHz

Output Capacitance

Cob

VCB = 10V, f = 1MHz

7 (Typical)

pF

Input Capacitance

Cib

VBE = 0.5V, IC = 0,

f = 1MHz

50 (Typical)

*Pulse Test : Pulse Width = 300μs, Duty Cycle = 2%