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H65R360T Datasheet(PDF) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd.

Part # H65R360T
Description  Super Junction N-Channel MOSFET
PDF  6 Pages
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Manufacturer  HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]
Direct Link  http://www.hxkj.hk
Logo HUIXIN - Guangdong Huixin Electronic Technology Co., Ltd.

H65R360T Datasheet(HTML) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd.

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+86-769-22857832
huixin@hx kj.hk
Rev.01
Page 2 of 6
Electrical Characteristics ( TJ= 25℃ unless otherwise specified)
Symbol
Parameter
Min.
Typ. Max. Units
Test Conditions
V(BR)DSS Drain- Source Breakdown Voltage
650
--
--
V
VGS=0V,ID=250µA
IDSS
Zero Gate Voltage Drain Current (25℃)
--
--
1
µA
VDS=650V,VGS=0V
Zero Gate Voltage Drain Current (100℃)
--
--
100
µA
VDS=650V,VGS=0V
IGSS
Gate to Source Forward Leakage
--
--
100
nA
VGS=30V ,VDS=0V
Gate to Source Reverse Leakage
--
--
-100
VGS=-30V ,VDS=0V
VGS(TH) Gate Threshold Voltage
2
3
4
V
VGS=VDS,ID=250µA
RDS(on) Static Drain- to- Source On-
Resistance
--
320
360
mΩ
VGS=10V,ID=6.5A
Dynamic Electrical Characteristics
Ciss
Input Capacitance
--
810
--
pF
VGS=0V
VDS=100V
f=1MHz
Coss
Output Capacitance
--
30
--
Crss
Reverse Transfer Capacitance
--
0.8
--
Qg
Total Gate Charge
--
19.5
--
nC
VDS=400
ID=6.5A
VGS=10V
Qgs
Gate- to- Source Charge
--
3.9
--
Qgd
Gate-to-Drain(" Miller") Charge
--
7.5
--
Switching Characteristics
td(ON)
Turn- on Delay Time
--
11.5
--
nS
VDS=400V
ID=6.5A
RG=10Ω
VGS=10V
trise
Rise Time
--
23.5
--
td(OFF) Turn- OFF Delay Time
--
43
--
tfall
Fall Time
--
21.5
--
Source- Drain Diode Characteristics
VSD
Diode Forward Voltage
--
0.9
1.4
V
IF=13A,VGS=0V
trr
Reverse Recovery Time
--
250
--
nS
VR=400V,IF=6.5A
di/dt=100A/µs
Qrr
Reverse Recovery Charge
--
1.8
--
uC



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