Mono 7W Class D Amplifier

2

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ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS

(VPVDD = 12V, VAGND = VPGND = 0, VSHDN = VMUTE = 5V, C1 = 0.1µF, CIN = 0.47µF, C2 = CCOM = CREG = 1µF, RIN = RFB = 20k

Ω,

RL =

∞, AC measurement bandwidth 22Hz to 22kHz, TA = TMIN to TMAX, unless otherwise noted. Typical values are at TA = +25°C.)

(Note 3)

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional

operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to

absolute maximum rating conditions for extended periods may affect device reliability.

PVDD to PGND.......................................................-0.3V to +30V

AGND to PGND .....................................................-0.3V to +0.3V

IN, PRE, PC, COM to AGND.....................-0.3V to (VREG + 0.3V)

MUTE, SHDN to AGND ............................................-0.3V to +6V

REG to AGND ...............................................-0.3V to (VS + 0.3V)

VS to AGND ..............................................................-0.3V to +6V

OUT+, OUT- to PGND .............................-0.3V to (PVDD + 0.3V)

C1N to PGND ..........................................-0.3V to (PVDD + 0.3V)

C1P to PGND .........................(PVDD - 0.3V) to (VCHOLD + 0.3V)

CHOLD to PGND .......................................(VC1P - 0.3V) to +36V

OUT+, OUT-, Short Circuit to PGND or PVDD ...........Continuous

Thermal Limits (Notes 1, 2)

Continuous Power Dissipation (TA = +70°C)

24-Pin TQFN Single-Layer PCB (derate 20.8mW/°C

above +70°C)........................................................1666.7mW

θJA................................................................................48°C/W

θJC..................................................................................3°C/W

Continuous Power Dissipation

24-Pin TQFN Multiple-Layer PCB

(derate 27.8mW/°C above +70°C) ........................2222.2mW

θJA................................................................................36°C/W

θJC..................................................................................3°C/W

Operating Temperature Range ...........................-40°C to +85°C

Storage Temperature Range .............................-65°C to +150°C

Junction Temperature ......................................................+150°C

Lead Temperature (soldering, 10s) .................................+300°C

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

AMPLIFIER DC CHARACTERISTICS

Speaker-Supply Voltage Range

PVDD

Inferred from PSRR test

8

28

V

Undervoltage Lockout

UVLO

6.8

V

TA = +25°C

15

20

Quiescent Supply Current

IPVDD

25

mA

Shutdown Supply Current

ISHDN

VSHDN = 0, TA = +25°C

1

10

µA

REG Voltage

VREG

4.0

4.2

4.5

V

Preregulator Voltage

VS

4.85

V

COM Voltage

VCOM

1.94

2.06

2.16

V

INPUT AMPLIFIER CHARACTERISTICS

Capacitive Drive

CL

No sustained oscillation

30

pF

Output Swing

Sinking ±1mA (Note 4)

2.05

V

Open-Loop Gain

AVO

88

dB

Input Offset Voltage

VOS

IN to COM

±2

mV

Input Amplifier Slew Rate

2.5

V/µs

Input Amplifier Unity-Gain

Bandwidth

3.5

MHz

Note 1: Thermal performance of this device is highly dependent on PCB layout. See the

Applications Information section for more detail.

Note 2: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer

board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.