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V1.0

18/03/25

Bipolar Transistor

Newark.com/multicomp-pro

Farnell.com/multicomp-pro

sg.element14.com/b/multicomp-pro

Absolute Maximum Ratings (Ta = 25°C)

Description

Symbol

2N6052

Unit

Collector Base Voltage

VCBO

150

V DC

Collector-Emitter Voltage

VCEO

90

Emitter-Base Voltage

VEBO

7

Collector Current - Continuous

Peak (1)

IC

ICM

20

30

A DC

Base Current — Continuous

IB

5

Total Device Dissipation @ TC = 25°C

Derate above 25ºC

PD

140

0.8

Watts

W/°C

Operating and Storage Junction Temperature Range

Tj, Tstg

- 65 to +200

ºC

Thermal Characteristics

Description

Symbol

Value

Unit

Thermal Resistance, Junction to Case

RJC

1.25

ºC/W

Features

• Fast switching speeds and high current capacity

High Speed - tf = 0.5s (Max)

High Current - IC=30Amp

Low Saturation - VCE(sat) = 2.5 V (Max) @ IC=20Amp

Application: Switching regulators, inverters, wide-band amplifiers and power oscillators in industrial and commercial

applications.

*Indicates JEDEC Registered Data.

(1) Pulse Test: Pulse Width ≤ 10 ms, Duty Cycle ≤ 50%.