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MS503
Schottky Rectifier Diode
Page 1
31/05/05 V1.0
Electrical Characteristics
Parameter
Symbol
Test Conditions
Value
Units
Average forward current
IF(AV)
TA = 123°C, square wave,
R
θJL = 11°C/W, L = 1/8”
5.0
Amps
TA = 113°C, square wave,
R
θJL = 14.7°C/W, L = 3/8”
Maximum surge current
IFSM
8.3ms, half sine, TJ = 150°C
300
Maximum peak forward voltage
VFM
IFM = 1.0A : TJ = 25°C*
0.40
Volts
IFM = 5.0A : TJ = 25°C*
0.49
Maximum peak reverse current
IRM
VRRM, TJ = 25°C
250
µA
Typical junction capacitance
CJ
VR = 5.0V, TJ = 25°C
430
pF
Thermal and Mechanical Characteristics:
Storage temperature range
TSTG
-
-40 to +150
°C
Operating junction temperature range
TJ
-
Maximum thermal resistance
R
θJL
L = 3/8" (Junction to lead)
14.7
°C/W
L = 1/8" (Junction to lead)
11.0
Weight
-
-
0.032
1
Ounce
Grams
*Pulse test: Pulse width 300
µ seconds, Duty Cycle 2%.
Features:
• Schottky barrier rectifier.
• Guard ring protection.
Minimum
Maximum
A
.188(4.78)
.260(6.50)
B
1.00(25.4)
-
C
.285(7.24)
.375(9.52)
D
.046(1.17)
.056(1.42)
Dimensions
Dimensions : Inches (Millimetres)
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