5.6 Electrical Characteristics

At TA=25

℃ (unless otherwise noted) (1)

PARAMETER

PACKAGE

TEST CONDITION

MIN

TYP

MAX

UNIT

VRWM

Reverse stand-off

voltage

DPL & DPY

package

IIO <100nA, across operating temperature

range

-5.5

5.5

V

ILEAK

Reverse leakage

current

VIO = 5.5V, IO to GND or GND to IO

5

50

nA

VBR

Break-down

voltage

IIO = 1mA, IO to GND

7

8

9

V

VCLAMP

Clamping voltage

with TLP

DPL Package

IPP = 1A, TLP, IO to GND

7.6

V

IPP = 5A, TLP, IO to GND

8.2

IPP = 16A, TLP, IO to GND

10.4

IPP = 1A, TLP, GND to IO

7.6

IPP = 5A, TLP, GND to IO

8.2

IPP =16A, TLP, GND to IO

10.4

Clamping voltage

with surge strike

(3)

IPP = 6A, tp = 8/20µs , IO to GND

9.5

IPP = 6A, tp = 8/20µs , GND to IO

9.5

RDYN

Dynamic

resistance (2)

IO to GND

0.19

Ω

GND to IO

0.19

VCLAMP

Clamping voltage

with TLP

DPY Package

IPP = 1A, TLP, IO to GND

8.2

V

IPP = 5A, TLP, IO to GND

9.2

IPP = 16A, TLP, IO to GND

11.5

IPP = 1A, TLP, GND to IO

8.2

IPP = 5A, TLP, GND to IO

9.2

IPP =16A, TLP, GND to IO

11.5

Clamping voltage

with surge strike

(3)

IPP = 6A, tp = 8/20µs , IO to GND

10

IPP = 6A, tp = 8/20µs , GND to IO

10

RDYN

Dynamic

resistance (2)

IO to GND

0.24

Ω

GND to IO

0.24

CL

Line capacitance

DPL & DPY

Package

VIO = 0V; ƒ = 1MHz, Vpp = 30mV, IO to GND

or IO to GND

0.5

pF

(1)

Typical parameters are measured at 25

℃

(2)

Extraction of RDYN using least squares fit of TLP characteristics between I = 10A and I = 20A

(3)

Nonrepetitive current pulse 8 to 20µs exponentially decaying waveform according to IEC 61000-4-5

ESD451

SLVSH27B – APRIL 2023 – REVISED DECEMBER 2025

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