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HS01T80Q Datasheet(PDF) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd. |
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HS01T80Q Datasheet(HTML) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd. |
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2 / 5 page ![]() ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Symbol Test Condition Quadrant Value Unit IGT VD=12V RL=33 Ω ALL MAX. 5 mA VGT ALL MAX. 1.3 V VGD VD=VDRM Tj=125℃ RL=3.3K Ω ALL MIN. 0.2 V IL IG=1.2IGT Ⅰ-Ⅲ-Ⅳ MAX. 5 mA Ⅱ 10 IH IT=50mA MAX. 5 mA dV/dt VD=540V Gate Open Tj=110℃ MIN. 20 V /μs (dV/dt)c (dI/dt)c=0.44A/ms, Tj=110℃ MIN. 1 V/μs ton IG=10mA IA=200mA IR=20mA Tj=25℃ TYP. 2 μs toff 20 STATIC CHARACTERISTICS Symbol Parameter Value(MAX.) Unit VTM ITM=1.4A tp=380 μs Tj=25℃ 1.45 V VTO Threshold voltage Tj=125℃ 0.96 V RD Dynamic resistance Tj=125℃ 225 mΩ IDRM VD=VDRM VR=VRRM Tj=25℃ 5 μA IRRM Tj=125℃ 0.25 mA THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) junction to case (AC) 20 ℃/W Rth(j-a) junction to ambient (AC) 130 ℃/W 3 of 1 Page 1.0 Rev. huixin@hxkj.hk +86-769-22857832 huixin@hxkj.hk +86-769-22857832 Rev. 1.0 Page 2 of 5 |
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