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HS04S80D Datasheet(PDF) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd. |
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HS04S80D Datasheet(HTML) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd. |
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2 / 5 page ![]() Peak pulse voltage (Tj=25℃; non-repetitive,off-state;FIG.8) Vpp 3 kV ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Symbol Test Condition Quadrant Value Unit IGT VD =12V RL =33 Ω Ⅰ-Ⅱ-Ⅲ MAX. 10 mA VGT Ⅰ-Ⅱ-Ⅲ MAX. 1 V VGD VD =VDRM Tj =125℃ RL =3.3K Ω Ⅰ-Ⅱ-Ⅲ MIN. 0.2 V IL IG =1.2IGT Ⅰ-Ⅲ MAX. 20 mA Ⅱ 35 IH IT =100mA MAX. 15 mA dV/dt VD=540V Gate Open Tj =125℃ MIN. 200 V /μs (dI/dt)c (dV/dt)c=10V /μs, Tj=125℃ MIN. 2.5 A/ms ton IG=20mA IA=200mA IR=20mA Tj=25℃ TYP. 2.5 μs toff 25 STATIC CHARACTERISTICS Symbol Parameter Value(MAX.) Unit VTM ITM =5A tp=380 μs Tj=25℃ 1.65 V VTO Threshold voltage Tj=125℃ 0.799 V RD Dynamic resistance Tj=125℃ 151 m Ω IDRM VD =VDRM VR =VRRM Tj=25℃ 5 μA IRRM Tj=125℃ 0.25 mA THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) junction to case (AC) 4.5 ℃/W Rth(j-a) junction to ambient (AC) 120 ℃/W 3 of 1 Page 1.0 Rev. huixin@hxkj.hk +86-769-22857832 huixin@hxkj.hk +86-769-22857832 Rev. 1.0 Page 2 of 5 |
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