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HS16B80T Datasheet(PDF) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd. |
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HS16B80T Datasheet(HTML) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd. |
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2 / 4 page ![]() Peak pulse voltage (Tj=25℃; non-repetitive,off-state;FIG.7) Vpp 1 kV ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Symbol Test Condition Quadrant Value Unit IGT VD=12V RL=33Ω Ⅰ -Ⅱ-Ⅲ MAX. 50 mA Ⅳ 70 VGT ALL MAX. 1 V VGD VD=VDRM Tj=125℃ RL=3.3KΩ ALL MIN. 0.2 V IL IG=1.2IGT Ⅰ -Ⅲ-Ⅳ MAX. 70 mA Ⅱ 100 IH IT=500mA MAX. 60 mA dV/dt VD=540V Gate Open Tj=125℃ MIN. 1000 V/μs (dV/dt)c (dI/dt)c=7A/ms, Tj=125℃ MIN. 12 V/μs ton IG=80mA IA=400mA IR=40mA Tj=25℃ TYP. 5 μs toff 50 STATIC CHARACTERISTICS Symbol Parameter Value(MAX.) Unit VTM ITM=22.5A tp=380μs Tj=25℃ 1.5 V VTO Threshold voltage Tj=125℃ 0.77 V RD Dynamic resistance Tj=125℃ 30 mΩ IDRM VD=VDRM VR=VRRM Tj=25℃ 5 μA IRRM Tj=125℃ 0.5 mA THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) junction to case (AC) 2.0 ℃ /W Rth(j-a) junction to ambient (AC) 60 ℃ /W 3 of 1 Page 1.0 Rev. huixin@hxkj.hk +86-769-22857832 huixin@hxkj.hk +86-769-22857832 Rev. 1.0 Page 2 of4 |
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