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HS16C80F Datasheet(PDF) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd. |
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HS16C80F Datasheet(HTML) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd. |
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2 / 4 page ![]() Peak gate power PGM 10 W Peak pulse voltage (Tj=25℃; non-repetitive,off-state;FIG.7) Vpp 4 kV ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Symbol Test Condition Quadrant Value Unit IGT VD =12V RL =33Ω Ⅰ -Ⅱ-Ⅲ MAX. 35 mA VGT Ⅰ -Ⅱ-Ⅲ MAX. 1 V VGD VD =VDRM Tj =125℃ RL =3.3KΩ Ⅰ -Ⅱ-Ⅲ MIN. 0.2 V IL IG =1.2IGT Ⅰ -Ⅲ MAX. 50 mA Ⅱ 60 IH IT =500mA MAX. 40 mA dV/dt VD=540V Gate Open Tj =125℃ MIN. 1000 V/μs (dI/dt)c (dV/dt)c=20V/μs Tj=125℃ MIN. 10 A/ms ton IG=40mA IA=200mA IR=20mA Tj=25℃ TYP. 7 μs toff 50 STATIC CHARACTERISTICS Symbol Parameter Value(MAX.) Unit VTM ITM =22.5A tp=380μs Tj=25℃ 1.5 V VTO Threshold voltage Tj=125℃ 0.77 V RD Dynamic resistance Tj=125℃ 30 mΩ IDRM VD =VDRM VR =VRRM Tj=25℃ 5 μA IRRM Tj=125℃ 0.5 mA THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) junction to case (AC) 2.3 ℃ /W Rth(j-a) junction to ambient (AC) 60 ℃ /W 3 of 1 Page 1.0 Rev. huixin@hxkj.hk +86-769-22857832 huixin@hxkj.hk +86-769-22857832 Rev. 1.0 Page 2 of4 |
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