Potens semiconductor corp.

Ver.1.02

2

PDB2216S

20V Dual N-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250µA

20

---

---

V

IDSS

Drain-Source Leakage Current

VDS=20V , VGS=0V , TJ=25℃

---

---

1

µA

VDS=16V , VGS=0V , TJ=125℃

---

---

10

µA

IGSS

Gate-Source Leakage Current

VGS=±10V , VDS=0V

---

---

±100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=4.5V , ID=3A

---

28

34

m



VGS=2.5V , ID=2A

---

36

47

m



VGS=1.8V , ID=1.5A

---

51

66

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250µA

0.4

0.6

1

V

gfs

Forward Transconductance

VDS=10V , ID=2A

---

3.5

---

S

Dynamic and switching Characteristics

Qg

Total Gate Charge2 , 3

VDS=10V , VGS=4.5V , ID=3A

---

3.2

5

nC

Qgs

Gate-Source Charge2 , 3

---

0.5

1.5

Qgd

Gate-Drain Charge2 , 3

---

1.3

3

Td(on)

Turn-On Delay Time2 , 3

VDD=10V , VGS=4.5V , RG=6



ID=3A

---

2.9

4.5

ns

Tr

Rise Time2 , 3

---

8.4

13

Td(off)

Turn-Off Delay Time2 , 3

---

19.2

30

Tf

Fall Time2 , 3

---

5.6

9

Ciss

Input Capacitance

VDS=10V , VGS=0V , F=1MHz

---

280

420

pF

Coss

Output Capacitance

---

50

75

Crss

Reverse Transfer Capacitance

---

45

68

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

4.8

A

ISM

Pulsed Source Current

---

---

9.6

A

VSD

Diode Forward Voltage

VGS=0V , IS=1A , TJ=25℃

---

---

1

V

Electrical Characteristics (T

J=25 ℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%.

3.

Essentially independent of operating temperature.